Recoverable Patterning of Macro-assembled Graphene Nanofilms

Patterning is a crucial fabrication step for successfully applying two-dimensional materials in electronic and optoelectronic devices. It can realize miniaturization help explore new physical phenomena of 2D materials. However, the manufacturing process inevitably introduces defects, which require harsh conditions to recover. Here, we propose sputtering-lithography-annealing (SLA) strategy patterning graphene nanofilm with pattern sizes ranging from microns 100 nm scale without lattice damage. The sputtered masking agents introduce easily repairable defects into films. Especially, introduced by aluminum be removed entirely. To confirm validity SLA strategy, prepared macro-assembled nanofilms (nMAG)/Ge nMAG/Si heterojunction arrays infrared detection. patterned detectors present responsivity 0.09 A/W at 2 μm (nMAG/Ge) 26.4 mA/W 1550 (nMAG/Si) high array homogeneity, similar devices patterning. This lays foundation further exploration superstructures nMAG extended other